GaN Solution

uGAN

uP9801

High Power Density Driver GaN FET Half-Bridge Power Stage

Datasheets PDF

General Description

The uP9801Q is a fully integrated power stage consisting of a half-bridge driver two 100V GaN FETs of 5.6mΩ (Typ.).The dual PWM, it can control to high and low side independently, no external components required.

In typical package construction, unlike the uP9801Q, bonding wires are used for interconnections adding both parasitic inductance and resistance. Interconnections within the uP9801Q are accomplished by “flat“ low inductance paths. This construction along with the integration of many components that would normally be external such as boot capacitor, boot diode, and high-frequency VCC bypass capacitors help save PCB space, lower cost, increase robustness and lessen layout criticality and PCB stack-up requirements.

Enhanced electrical characteristics include a UVLO on VCC, short propagation delays, high side low side matching propagation delays, low COSS GaN FETs. Multi-MHz operation is possible. Packaged in an ultra-low profile PLP5x6-12L, the uP9801Q applies to any non-isolated 48V input synchronous regulator application with outputs up to 15A.

Pin Configuration & Typical Application Circuit

Top View

Feature

  • Max Input Voltage to 65V DC
  • Integrated 100V, 5.6mΩ (Typ.) GaN FETs
  • Internal Bootstrap and VCC Capacitance
  • Optimized Integrated IC for Parasitic Effect
  • Fast Propagation Delay: 20ns (Typ.)
  • CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage) 
  • Under Voltage Lockout for VCC Input
  • Available in PLP5x6-12B Package
  • RoHS Compliant and Halogen Free

Application

  • Half-Bridge and Full-Bridge Power Stage
  • 48V Point of Load (PoL) Converter
  • Industrial Automation
  • Telecom Infrastructure & Baseband Boards