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Low Voltage Power MOSFET < 40V

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QA3111N6N

30V Asymmetric Dual N-Channel Power MOSFET

Datasheets PDF

General Description

The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell den sity to provide low Rd son and gate charge characteristics. It is ideally suited to support synchronous buck con verier applicati ons.

The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability.

Pin Configuration

Feature

  • Advaneed high cell density Trench technology
  • Super Low Gate Charge
  • Excellent CdV/dt effect decline
  • Green Device Available

Application

  • High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPCA/GA
  • Networking DC-DC Power System
  • CCFL Back-light Inverter