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Low Voltage Power MOSFET < 40V

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QA3117N3N

30V Asymmetric Dual N-Channel Power MOSFET

Datasheets PDF

General Description

The QA3117N3N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.

The QA3117N3N meets RoHS and Green Product requirements while supporting full function reliability.

Pin Configuration

Feature

  • Advanced high cell density Trench technology
  • Super Low Gate Charge
  • Excellent CdV/dt effect decline
  • Green Device Available

Application

  • High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • Networking DC-DC Power System
  • CCFL Back-light Inverter