MOSFET
40V~200V 中耐压MOSFET
40V~200V 中耐压MOSFET
| wdt_ID | Part Number | Package Type | Configuration | MOSFET Type | VDS (V) | VGS (V) | Vth max. (V) | RDS(on) @10V max | RDS(on) @4.5V max | RDS(on) @2.5V max | RDS(on) @1.8V max | Ciss (pF) | Coss (pF) | Crss (pF) | Qg (nC) | Qgs (nC) | Qgd (nC) | ID (A) Tc=25℃ | ID (A) Tc=100℃ | ID (A) TA=25℃ | ID (A) TA=70℃ | EAS.max(mj) | PD (W) Tc=25℃ | PD (W) TA=25℃ | PD (W) TA=70℃ | ESD Diode | Schottky Diode |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 86 | QM4015S |
SOP8 | Single | P | -40 | ±20 | -2.5 | 13 | 20 | 3500 | 323 | 222 | 28 | 7.7 | 7.5 | -8.7 | -7 | 262 | 1.5 | No | No | ||||||
| 87 | QN6102S8N |
SOP8 | Single | N | 60 | ±20 | 2.5 | 7.0 | 10.4 | 1929 | 305 | 40 | 29.5 | 5.9 | 4.1 | 11.5 | 8 | 72.6 | 1.5 | No | No | ||||||
| 88 | QN6101B3N |
TO263 | Single | N | 60 | ±20 | 2.5 | 3.3 | 4.7 | 4883 | 755 | 75 | 73.8 | 14.9 | 10.3 | 209 | 132 | 25 | 20 | 440.9 | 250 | 3.6 | No | No | |||
| 89 | QN6101M6N |
PRPAK5*6 | Single | N | 60 | ±20 | 2.5 | 2.8 | 4.0 | 4727 | 757 | 80 | 68 | 13 | 9.1 | 111 | 70 | 21 | 17 | 132.1 | 62 | 2.2 | No | No | |||
| 90 | QN6102M6N |
PRPAK5*6 | Single | N | 60 | ±20 | 2.5 | 5.8 | 8.8 | 1971 | 310 | 35 | 29 | 6.4 | 3.7 | 66 | 41 | 14 | 11 | 73.7 | 48 | 2.2 | No | No | |||
| 91 | QM6004D |
TO252 | Single | N | 60 | ±20 | 2.5 | 30 | 38 | 1378 | 86 | 64 | 12.6 | 3.2 | 6.3 | 23 | 15 | 5.6 | 4.5 | 34.5 | 34.7 | 2 | No | No | |||
| 92 | QM6003S |
SOP8 | Single | P | -60 | ±20 | -3.0 | 80 | 1260 | 90 | 57 | 20 | 3.6 | 5.4 | -3.7 | -3 | 51.2 | 1.5 | No | No | |||||||
| 93 | QM4006S |
SOP8 | Single | N | 40 | ±20 | 2.5 | 7.5 | 10 | 2332 | 193 | 138 | 18.8 | 4.7 | 8.2 | 10.5 | 8.4 | 166 | 1.5 | No | No | ||||||
| 94 | QN0103M6N |
PRPAK5*6 | Single | N | 100 | ±20 | 2.1 | 16.6 | 23.9 | 1161 | 286 | 10 | 20.2 | 3.7 | 4.3 | 70 | 44 | 8 | 6 | 77.2 | 160 | 2.2 | No | No | |||
| 95 | QN0103M3N |
PRPAK3*3 | Single | N | 100 | ±20 | 2.3 | 16.6 | 24.4 | 1191 | 289 | 9 | 20.1 | 18.5 | 3.9 | 43 | 27 | 8 | 6 | 49.3 | 62 | 2.3 | No | No | |||
| Package Type | Configuration | MOSFET Type | VDS (V) | VGS (V) | Vth max. (V) | RDS(on) @10V max | RDS(on) @4.5V max | RDS(on) @2.5V max | RDS(on) @1.8V max | Ciss (pF) | Coss (pF) | Crss (pF) | Qg (nC) | Qgs (nC) | Qgd (nC) | ID (A) Tc=25℃ | ID (A) Tc=100℃ | ID (A) TA=25℃ | ID (A) TA=70℃ | EAS.max(mj) | PD (W) Tc=25℃ | PD (W) TA=25℃ | PD (W) TA=70℃ | ESD Diode | Schottky Diode |