Delivering Higher Efficiency Thermal Solutions for High-Power, High-Density Applications in AI Servers and Data Centers
uPI Semiconductor Corp. announces the release of its next-generation uP1969 and uP1970 MV E-Mode GaN FET dual-channel gate drivers, supporting up to 100V (uP1969) and 120V (uP1970). These devices are designed for advanced AI servers and data center rack systems operating at 48/54V, enabling highperformance, high-density power conversion and KW-level power supply designs. The uP1969 and uP1970 are optimized to drive both high-side and low-side enhancement-mode GaN FETs in half-bridge or synchronous buck configurations. Featuring advanced high/low-side GaN FET control technology, they offer two independent PWM HI/LI inputs for separate control of the high-side and lowside drive signals (with adjustable dead time). Supporting switching frequencies up to 3MHz, they significantly improve switching speed, thereby reducing switching losses and boosting conversion efficiency. Built-in protections include VCC under-voltage lockout (UVLO) and bootstrap overcharge prevention to ensure safe operating voltages for GaN FETs. The uP1969 and uP1970 are offered in three package options: WLCSP1.6×1.6-12B, VQFN3x3-14L (flip-chip), and UQFN2x2-12L (flip-chip), meeting the needs of most mainstream designs.
Key Features:
- High/low-side GaN FET gate drivers supporting half-bridge/synchronous buck architectures
- Operating voltage: 100V (uP1969) / 120V (uP1970)
- Split outputs with adjustable turn-on/turn-off drive strength
- High-speed switching performance: up to 3MHz
- Ultra-low on-resistance: pull-down 0.4Ω (uP1969), 0.2Ω (uP1970)
- Fast propagation delay (typical: 20ns), excellent delay matching (1.5ns)
- Supply voltage range: 4.5V–5.5V
- Multiple package options: WLCSP1.6×1.6-12B, VQFN3x3-14L, UQFN2x2-12L
Target Applications:
- AI servers and high-performance computing (HPC) power modules (1/4 & 1/8 brick)
- AI data center battery backup units (BBU)
- High-power-density motor drives (robotics applications)
- High-power/long-distance wireless charging systems
- Half-bridge and full-bridge DC-DC converters
- High-input-voltage power conversion modules
uPI stated:
“With the rapid growth of AI and high-performance computing, the demand for GaN solutions featuring high power, high density, and high efficiency continues to rise. The launch of the uP1969 and uP1970 will help customers achieve higher performance and better power density designs in AI servers, data centers, and robotic motor drive applications.”