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Resonant Gate Drive Enhances Robustness Of GaN Power Stages

Resonance driving of silicon-based power devices has been extensively researched. The use of resonance to save power has been a main focus of this research. In this article, we will show an additional use of resonance—to enhance robustness of circuit operation in GaN...

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Visit uPI Semiconductor Corp. at APEC Booth 1716

Visit uPI Semiconductor Corp. at APEC Booth 1716

Join uPI Semi at the upcoming Applied Power Electronics Conference & Exposition (APEC) event in Houston, TX to learn more about uPI’s current and next generation power management products.Talk to our experienced engineers to help you select the best high power,...

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EPC and uPI Semiconductor to offer GaN solutions with uP1966

EPC and uPI Semiconductor are partnering to offer the uP1966 GaN half-bridge driver to the markets. The uP1966E is an 85 V dual-channel gate driver designed to drive both high-side and low-side eGaN® FETS in half-bridge and full-bridge topologies. The driver...

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Visit uPI Semiconductor Corp. at APEC Booth 1255

Visit uPI Semiconductor Corp. at APEC Booth 1255

Join uPI Semi at the upcoming Applied Power Electronics Conference & Exposition (APEC) event in New Orleans, LA to learn more about uPI’s current and next generation power management products. Talk to our experienced electronics engineers to help you select the...

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Visit uPI Semiconductor Corp. at APEC booth #153

Visit uPI Semiconductor Corp. at APEC booth #153

uPI Semiconductor Corp. will be at the Applied Power Electronics Conference & Exposition (APEC), in Anaheim, California, March 17-21, 2019. Stop by booth #153 to watch our live demonstrations and learn about uPI’s current and next generation power management...

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Power Solutions for Today’s Gamers and Tomorrow’s

One day ahead of Gamescom 2018 - the world’s largest gaming event – NVIDIA® hosted an kicked off GeForce® gaming event with a keynote speech by NVIDIA® ’s founder and CEO, Mr. Jensen Huang to announce the first gaming GPUs powered by the NVIDIA RTX™ platform and new...

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uPI Powers the Just-Announced NVIDIA® Quadro® RTX™

At the professional graphics-focused SIGGRAPH conference held in Vancouver, Jensen Huang, NVIDIA®’s founder and CEO announced the first Turing™ architecture-based GPUs, following to that he unveiled the NVIDIA® Quadro® RTX 8000, Quadro RTX 6000 and Quadro RTX 5000,...

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uPI Introduces QZ-series TVS with Deep Snap Back Feature

According to Moore’s Law, the transistors in SOCs double about every two years through shrinking CMOS processes. This shrink drives junction depth and smaller Gate Oxide Thicknesses which results in higher sensitivity to ESD events. Some devices can only support ESD...

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Ultra High Speed 80V HB Driver for GaN Application

Ultra High Speed 80V HB Driver for GaN Application

New Levels of Power Density Silicon MOSFETs has used extensively in most power application since 35 years ago that displaced the bipolar transistor. In these 10 years, Gallium Nitride (GaN) is already an established semiconductor material, employed extensively in LED...

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UBIQ TVS – Broad Portfolio for Personal Computing

From audio to video, from normal speed data rate to high speed date rate, I/O ports are everywhere to connect devices for personal computing. Not only provide robustness for ESD strikes, but also provide Low Clamping and Low Capacitance to protect system chips, UBIQ...

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Ultra Low Cap. TVS – Ideal Solution for High Speed Interface

Along with technology innovation , the transmission rate for massive data between devices rapidly increases. High speed interfaces with data rates in Gbit/ sec range ONLY allow minimum additional capacitance on the line. Due to miniaturization, the smaller the size,...

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Declaration of Authorized Distributors

Recently, uPI Semiconductor Corporation learned that Shenzhen An Ge Ruei Technology Corporation and other distributors falsely declared they were authorized distributors of uPI Semiconductor Corporation's products and intentionally sold erroneous products at...

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Dual-N

Dual-N

Along with Ultra-Low-FOM process innovation, UBIQ Semiconductor Corp. announces a whole new series of highly integrated H/S side Dual-N MOSFET for buck converter applications, a high power density solution which could provide Iout up to 25A per phase. The patented...

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Full segment VCORE Solution Launched for AMD CPU/GPU

When tick-tock is no longer the rule, the market of personal computing becomes even more dynamic along with the optimized process, and revolutionary applications. Wherever however the giants move, the best strategy is to be always prepared. uPI has prepared a set of...

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High Power Density Integrated Fast-charging Solutions

High Power Density Integrated Fast-charging Solutions

Semiconductor, a precision power solution provider, introduces its latest high density, highly integrated fast-charging solutions designed for power bank, power strip, and car charger applications. With multiple integrated charging protocols (uP9616/uP7104) and...

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Specialty Driver for Gallium Nitride (GaN) power FETs

Higher density, greater efficiency became a real introduction instead of sales pitch when Gallium Nitride (GaN) power FETs came into the world of power conversion, where silicon MOSFETs has reached the limitation in massive application. What follows the benefit of...

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