Higher density, greater efficiency became a real introduction instead of sales pitch when Gallium Nitride (GaN) power FETs came into the world of power conversion, where silicon MOSFETs has reached the limitation in massive application.
What follows the benefit of faster switching frequency, lower Rdson and lower Qg, is the requirement of gate drivers that can meet the stringent gate-source voltage requirements.
uPI Semiconductor developed uP1964, which is specifically designed to effectively drive enhancement mode Gallium Nitride (GaN) transistors, the ultra small size driver IC which features fast propagation delays, fast and independently controllable rising/falling times, driving 8A sink/4A source peak currents through independent and flexible source and sink outputs. The specialized driver in a compact DFN3x3 package, has integrated the LDO which provides adjustable gate drive output voltages.
uPI has been designing and manufacturing high efficiency DC-DC power converters & regulators since 2006, the success in personal computing field paved a stable platform for mature technology and capability in utilizing advanced semiconductor process. With the release of uP1964, uPI is intended to show its aggressiveness in launching into high-power & high efficiency applications such power supplies and even automotive.