Resonant Gate Drive Enhances Robustness Of GaN Power Stages

Resonance driving of silicon-based power devices has been extensively researched. The use of resonance to save power has been a main focus of this research. In this article, we will show an additional use of resonance—to enhance robustness of circuit operation in GaN...
Visit uPI Semiconductor Corp. at APEC Booth 1716

Visit uPI Semiconductor Corp. at APEC Booth 1716

Join uPI Semi at the upcoming Applied Power Electronics Conference & Exposition (APEC) event in Houston, TX to learn more about uPI’s current and next generation power management products.Talk to our experienced engineers to help you select the best high power,...

EPC and uPI Semiconductor to offer GaN solutions with uP1966

EPC and uPI Semiconductor are partnering to offer the uP1966 GaN half-bridge driver to the markets. The uP1966E is an 85 V dual-channel gate driver designed to drive both high-side and low-side eGaN® FETS in half-bridge and full-bridge topologies. The driver...