Resonance driving of silicon-based power devices has been extensively researched. The use of resonance to save power has been a main focus of this research.
In this article, we will show an additional use of resonance—to enhance robustness of circuit operation in GaN power stages. We’ll also demonstrate how the uP1964 GaN driver is well suited to such applications.
The uP1964 is a single-channel GaN driver with performance aspects that help solve common issues with high-voltage and low-voltage GaN devices. The uP1964 can be used with lossy ferrite beads in a resonant-gate-drive topology to minimize problems with gate oscillations, improve cross-conduction immunity in half-bridge topologies, and make drive circuit PCB layouts less critical.
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