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GaN FET Driver

Renewable Energy, Energy Stroage, Zero Carbon Emission

GaN Applications are suitable for MPPT and ESS (Energy Storage System) design architecture.
Gan device plays a key role for the devekopment of zero carbon emission,which provides excellent features, such as high freqency and Zero switching lose.

wdt_ID	Part Number	Driver type	Number of channels (# )	Power switch	Min Input Voltage (V)	Max Input Voltage (V)	Rise time (ns)	Fall time (ns)	Prop Delay (ns)	Fetures	Package
1	uP1964PDDA Single-Channel Gate Driver for Enhancement Mode GaN Transistors	Single Driver	1	GaNFET MOSFET	6	13.2	6.7	3.9	13.5	Integrated LDO Adjustable Gate Drive Output Voltag	WDFN3x3-10
2	uP1966E Dual-Channel Gate Driver for Enhancement Mode GaN Transistors	Half-bridge drivers	2	GaNFET MOSFET	4.5	80	8	4	20	Bootstrap Supply Voltage Clamping Independent Sour	WLCSP 1.6x1.6-12B
3	uP1964AFCB Single-Channel Gate Driver for Enhancement Mode GaN Transistors.	Single Driver	1	GaNFET MOSFET	6	13.2	6.7	3.9	13.5	Integrated LDO Adjustable Gate Drive Output Voltage	WLCSP1.24x0.89-12B
		Driver type	Number of channels (# )	Power switch	Min Input Voltage (V)	Max Input Voltage (V)	Rise time (ns)	Fall time (ns)	Prop Delay (ns)	Fetures	Package

uPI GaN Driver Family

The uPI family of high speed GaN driver products consists of 3 different devices designed for GaN field effect transistors (FETs) requiring 5V gate drive, which are a single-channel driver – uP1964, a dual-channel drivers – uP1966E designed for half-bridge/full-bridge topologies and a single-channel driver – uP1966D for synchronous rectifier applications.

uPI GaN Power Stage Family

uGaN™, the uPI GaN power stage products integrate high speed driver and two enhancement mode Gallium Nitride(GaN) FETs in a half bridge configuration, and packs all in an ultra-low profile package. The GaN FETs provide very small input capacitance CISS, they significantly reduce switching loss and have near zero reverse recovery.