GaN Solution
GaN FET Driver
uP1964AFCB
Single-Channel Gate Driver forEnhancement Mode GaN Transistors
Datasheets PDF
General Description
The uP1964 is designed to high-speed low-side driver for enhancement mode Gallium Nitride (GaN) transistors and MOSFETs application. With high source and sink output current capability, the uP1964 offers enhanced immunity against Miller turn-on effect.
The uP1964 has two separate gate outputs allowing independent adjustment of the turn-on and turn-off capability by adding impedance for gate loop. This part has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The uP1964 can tailor different gate voltage requirements of GaN transistor or MOSFETs through VDRV. The gate driver output voltage level can be adjusted through external resistor voltage divider. The PWM input of this device is CMOS logic compatible and can withstand the input voltage up to 5.5V regardless of the VDRV voltage. This device also supports supply input under voltage lockout. The uP1964 is available in thermally enhanced WDFN3x3-10L.
Pin Configuration & Typical Application Circuit
WDFN3x3–10L
Top View
Integrated Driver / Isolator IC for H-B
Feature
- Independent Source and Sink Outputs for Controllable Rise and Fall Times
- Fast Propagation Delays (30ns, Typical)
- Fast Rise/Fall Times (6.7ns/3.9ns, Typical)
- Integrated LDO for Adjustable Gate Driver Output Voltage Level
- 6V to 13.2V Single Supply Range
- CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
- Hysteretic-Logic Thresholds for High-Noise Immunity
- -40°C to +125°C Operating Temperature Range
- RoHS Compliant and Halogen Free
Application
- Switched-Mode Power Supplies
- AC-to-DC, DC-to-DC Converters
- Motor Control Solar Power, UPS