uPI Semiconductor Introduces TCP8250: Ultra-Low Power 1-Cell Battery Protection IC with High-Accuracy Voltage and Current Detection

UPI Semiconductor today announced the launch of the TCP8250, a highly integrated 1-cell lithium-ion/lithium-polymer battery protection integrated circuit (IC) designed to provide precise over-charge, over-discharge, and over-current protection with exceptionally low...

uPI Semiconductor Unveils uP8328: High-Precision Secondary Protection IC with Integrated LDO for 2–5 Cell Li-Ion Battery Packs

uPI Semiconductor Corporation today announced the release of the uP8328 Secondary Protection IC, a highly reliable protection solution designed for 2- to 5-series Li-Ion and Li-Polymer battery packs. The uP8328integrates a high-accuracy voltage detection circuit,...

uPI Launches New MV E-Mode GaN FET Dual-Channel Gate Drivers — uP1969 & uP1970

Delivering Higher Efficiency Thermal Solutions for High-Power, High-Density Applications in AI Servers and Data Centers uPI Semiconductor Corp. announces the release of its next-generation uP1969 and uP1970 MV E-Mode GaN FET dual-channel gate drivers, supporting up to...

Resonant Gate Drive Enhances Robustness Of GaN Power Stages

Resonance driving of silicon-based power devices has been extensively researched. The use of resonance to save power has been a main focus of this research. In this article, we will show an additional use of resonance—to enhance robustness of circuit operation in GaN...

YAGEO plans to fully participate in uPI’s private placement of common shares and team up for a leading position in power component industry.

YAGEO Corporation (“YAGEO”; 2327.TW) and uPI Semiconductor Corporation (“uPI”;6719.TW) have reached the decision through their respective Boards of Directors today that YAGEO will participate fully in uPI’s private placement for 21 million shares, and Mr. Pierre Chen...